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| AP6679S/P Advanced Power Electronics Corp. Lower On-resistance Simple Drive Requirement Fast Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 9m -75A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. GD S TO-263(S) The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679P) are available for low-profile applications. G Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=100 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 D TO-220(P) S Units V V A A A W W/ Rating -30 25 -75 -50 300 89 0.71 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.4 62 Unit /W /W Data and specifications subject to change without notice 201231031 AP6679S/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -30 -1 - Typ. -0.03 Max. Units 9 15 -3 -1 -25 100 67 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-30A VGS=-4.5V, ID=-24A 34 42 6 25 11 35 58 78 960 740 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-24A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 25 ID=-16A VDS=-24V VGS=-4.5V VDS=-15V ID=-16A RG=3.3,VGS=-10V RD=0.94 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 2870 4590 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=-24A, VGS=0V IS=-16A, VGS=0V, dI/dt=-100A/s Min. - Typ. 47 43 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP6679S/P 280 150 240 T C =25 o C -10V -8.0V -ID , Drain Current (A) -6.0V 100 T C =150 o C -10V -8.0V -6.0V -4.5V -ID , Drain Current (A) 200 160 120 -4.5V 50 80 V G =-3.0V 40 V G =-3.0V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0.0 0.5 1.0 1.5 2.0 2.5 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 15 1.8 I D = 24A T C =25 Normalized R DS(ON) 13 1.6 I D =24A V G =10V RDS(ON) (m ) 1.4 11 1.2 1.0 9 0.8 7 0.6 3 5 7 9 11 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.3 30 2 -VGS(th) (V) 1.4 20 1.7 -IS(A) T j =150 o C T j =25 o C 1.4 10 1.1 0.8 0 0 0.2 0.4 0.6 0.8 1 1.2 0.5 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP6679S/P 7 10000 f=1.0MHz 6 VGS , Gate to Source Voltage (V) I D = -16A V DS = -24V Ciss C (pF) 5 4 1000 3 Coss Crss 2 1 0 0 10 20 30 40 50 60 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 1ms 100 0.2 0.1 ID (A) 10ms 100ms 10 0.1 0.05 PDM 0.02 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthjc + TC T C =25 C Single Pulse 1 o 1s DC Single Pulse 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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